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Fast Recovery Epitaxial Diode (FRED)
DSEI 120
IFAVM = 126 A VRRM = 600 V trr = 35 ns
VRSM V 600
VRRM V 600
Type
A
C
TO-247 AD
C
DSEI 120-06A
A
C
A = Anode, C = Cathode
Symbol IFRMS IFAVM yyx IFAV y IFRM IFSM
Test Conditions TVJ = TVJM TC = 70C; rectangular, d = 0.5 TC = 110C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 100 126 77 tbd 600 660 540 600 1800 1800 1450 1500 -40...+150 150 -40...+150 A A A A A A A A A2s A2s As A2s C C C W
2
Features
q
q q q q q q
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0
Applications
q
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25C Mounting torque
q q q
357 0.8...1.2 6
q
Nm g
q q q
Symbol
Test Conditions
Characteristic Values typ. max. 3 0.75 20 1.12 1.3 0.85 3.5 0.35 0.25 35 mA mA mA V V V mW K/W K/W K/W ns A
Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
IR
TVJ = 25C TVJ = 25C TVJ = 125C IF = 70 A;
VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM TVJ = 150C TVJ = 25C
Advantages
q q
VF VT0 rT RthJC RthCK RthJA trr IRM
q q
For power-loss calculations only TVJ = TVJM
q
High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling
Dimensions See DSEI 60-12 page D5 - 27
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25C VR = 350 V; IF = 80 A; -diF/dt = 200 A/ms L 0.05 mH; TVJ = 100C
35 17
50 21
x Chip capability, y limited to 70 A by leads
028
Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
(c) 2000 IXYS All rights reserved
1-2
DSEI 120, 600V
150 A 125 IF Qr 100
TVJ=150C
7 T = 100C C VJ V = 300V 6R 5 4 3
IF=140A IF= 70A IF= 35A
80 A TVJ= 100C 70 VR = 300V IRM 60 50 40
IF=140A IF= 70A IF= 35A
75
TVJ=100C
50 2 25
TVJ=25C
30 20 10 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt
1 0 100
0 0.0
0.5
1.0 V VF
1.5
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr versus -diF/dt
240 ns
TVJ= 100C VR = 300V
Fig. 3 Peak reverse current IRM versus -diF/dt
60 V 50 VFR 40
tfr VFR TVJ= 100C IF = 100A
1.4
3.0 s 2.5 tfr 2.0 1.5 1.0 0.5
1.2 Kf 1.0
Qr
220 trr 200
IF=140A IF= 70A IF= 35A
180
30 20 10
0.8
IRM
160
0.6 140 0.4 0 50 100 TVJ C 150 0 200 400 600 A/ms 1000 800 -diF/dt
0 0 200 400 600 800 diF/dt
0.0 1000 A/ms
Fig. 4 Dynamic parameters Qr, IRM versus TVJ
1 K/W
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i Rthi (K/W) 0.017 0.0184 0.1296 0.185 ti (s) 0.00038 0.0026 0.0387 0.274
D=0.7 0.5
ZthJC 0.1
0.3 0.2 0.01 0.05 Single Pulse
1 2 3 4
0.01 0.001
DSEI 120-06
0.01
0.1
1s
10 t
Fig. 7 Transient thermal resistance junction to case at various duty cycles
(c) 2000 IXYS All rights reserved
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